Samsung researchers announce breakthrough in growing gallium nitride LEDs on glass

Traditionally, LEDs have been grown on sapphire substrate or silicon wafer; both have their limits however, and thus, the idea of using

The new process is rather involved. It involves first laying down a bed of titanium metal on the glass to serve as a base template to help direct the growth of the GaN. Next, a very thin film of GaN (just a starter bit grown at a low temperature) is applied on top of the titanium metal. This will be the useful layer at the end of the process. After that, a sheet of silicon dioxide is applied over the GaN; it has very small holes in it that serve to direct how the crystals will grow as they come up through it. Rather like very tiny molds. The whole works is then subjected to very high temperatures to promote the crystal growth of the GaN. After that, the group says, the GaN can be processed using the same techniques that are used now with crystals grown on a sapphire or silicon.

While the process appears to be rather straightforward and uncomplicated, using standard materials and processes, it also appears, at least to some industry experts, to be time consuming, cumbersome, and because of the multiple steps required, too expensive to be used in a production type environment.

Samsung is undaunted however, stating that the new